| 订购数量 | 价格 | 
|---|---|
| 1+ | 
首页>BSM100GAR120DN2>芯片详情
BSM100GAR120DN2_EUPEC_IGBT 晶体管 1200V 100A DUAL安富世纪二部
- 详细信息
- 规格书下载
产品属性
- 类型描述 
- 型号:BSM100GAR120DN2 
- 功能描述:IGBT 晶体管 1200V 100A DUAL 
- RoHS:否 
- 制造商:Fairchild Semiconductor 
- 配置:集电极—发射极最大电压 
- VCEO:650 V 
- 集电极—射极饱和电压:2.3 V 
- 栅极/发射极最大电压:20 V 在25 
- C的连续集电极电流:150 A 
- 栅极—射极漏泄电流:400 nA 
- 功率耗散:187 W 
- 封装/箱体:TO-247 
- 封装:Tube 
相近型号
- BSM100GAL60DLC
- BSM100GB1200DL
- BSM100GAL12ODL
- BSM100GB120D
- BSM100GB120DLC
- BSM100GAL120NC2K(DLC
- BSM100GB120DLC_E3256
- BSM100GAL120DN2K
- BSM100GB120DLCB
- BSM100GB120DLCHOSA1
- BSM100GAL120DN2
- BSM100GAL120DN
- BSM100GB120DLCK
- BSM100GB120DLCKG
- BSM100GAL120DLCK,
- BSM100GB120DLCKHOSA1
- BSM100GAL120DLCK
- BSM100GB120DN1
- BSM100GAL120DLC
- BSM100GB120DN11
- BSM100GAL120DL
- BSM100GB120DN2
- BSM100GAL120D
- BSM100GB120DN2(DLC)
- BSM100GAL100D
- BSM100GB120DN2(K)
- BSM100GA120DN2
- BSM100GB120DN2(SCH15
- BSM100GA120DN12
- BSM100GA120DN11
- BSM100D12PIC003
- BSM100GB120DN2_B2
- BSM100
- BSM100GB120DN2_E3254
- BSM0GP60(60G)
- BSM100GB120DN2_E3256
- BSM080D12P2C008
- BSM100GB120DN2A10
- BSM075
- BSM100GB120DN2B
- BSM-06BT1
- BSM100GB120DN2B1
- BSM05GD100DN1
- BSM100GB120DN2-B2
- BSM05GD100D
- BSM050
- BSM-030G-LP
- BSM100GB120DN2E
- BSM-030G-LF
- BSM100GB120DN2E3238



