MOSFET N-CH 55V 0.335A SOT23

Nexperia

安世

55 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic

文件：742.71 Kbytes 页数：16 Pages

NEXPERIA

安世

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

SIMOPAC® Module VDS = 100 V ID = 200 A RDS(on) = 8.5 mΩ ●Power module ●Single switch ●N channel ●Enhancement mode ●Package with insulated metal base plate ●Package outline/Circuit diagram: 11)

文件：216.54 Kbytes 页数：9 Pages

SIEMENS

西门子

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

SIMOPAC® Module VDS = 100 V ID = 200 A RDS(on) = 8.5 mΩ ●Power module ●Single switch ●N channel ●Enhancement mode ●Package with insulated metal base plate ●Package outline/Circuit diagram: 11)

文件：216.54 Kbytes 页数：9 Pages

SIEMENS

西门子