丝印：670N25NF；Package：PG-TDSON-8；OptiMOSTM3 Power-Transistor, 250 V

Features •N-channel,normallevel •175°Crated •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequencyswitchingandsynchronousrectifica

文件：932.71 Kbytes 页数：11 Pages

INFINEON

英飞凌

N 沟道功率 MOSFET

OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. • Improved hard commutation ruggedness \n• Optimized hard switching behavior \n• Industry’s lowest R ds(on), Q g and Q rr \n• RoHS compliant - halogen free\n\n优势:\n• Highest system reliability\n• System cost reduction\n• Highest efficiency and power density\n• Easy-to-design products;

Infineon

英飞凌

OptiMOSTM3 Power-Transistor, 250 V

Features •N-channel,normallevel •175°Crated •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequencyswitchingandsynchronousrectifica

文件：932.71 Kbytes 页数：11 Pages

INFINEON

英飞凌

TDSON-8

INFINEON

英飞凌

上传：深圳市威尔健半导体有限公司

TDSON-8

INFINEON/英飞凌

上传：深圳市威尔健半导体有限公司