BSC220N20NSFD数据表ic资料原装现货英飞凌-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
BSC220N20NSFD	文件：300 bytes Page：1 Pages	采用 SuperSO8 封装的 OptiMOS™ 175°C 功率 MOSFET Infineon's OptiMOS™ BiC MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.\n Low reverse recovery charge (Qrr) improves the system reliabilit	Infineon 英飞凌	Infineon
BSC220N20NSFD	文件：949.44 Kbytes Page：11 Pages	丝印：220N20F；Package：TSON-8-3；OptiMOSTM3 Power-Transistor, 200 V 文件：949.44 Kbytes 页数：11 Pages	INFINEON 英飞凌	INFINEON
IXTH220N20	文件：322.21 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 220A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.5mΩ(Max)@VGS= 10V DESCRIPTION ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·PFC Circuits ·AC and DC Motor Drives ·Robotics and Servo Control 文件：322.21 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
BSC252N10NSFG	文件：0 bytes Page：0 Pages	TDSON-8	INFINEON 英飞凌上传：深圳市威尔健半导体有限公司	INFINEON
BSC252N10NSFG	文件：0 bytes Page：0 Pages	TDSON-8	INFINEON/英飞凌上传：深圳市威尔健半导体有限公司	INFINEON/英飞凌

更多BSC220N20NSFD供应商更新时间2026-2-4 14:03:00