N 沟道功率 MOSFET

The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part. • Excellent switching performance\n• World’s lowest R DS(on)\n• Very low Q g and Q gd\n• Excellent gate charge x R DS(on) product (FOM)\n• RoHS compliant-halogen free\n• MSL1 rated 2\n\n优势:\n• Environmentally friendly\n• Increased efficiency\n• Highest power density\n• Less paralleling required\n• S;

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英飞凌

Material Content Data Sheet

文件：33.53 Kbytes 页数：1 Pages

Infineon

英飞凌

OptiMOS3 Power-Transistor

文件：376.27 Kbytes 页数：9 Pages

Infineon

英飞凌

‘N-Channel Enhancement MOSFET

Application o Load switch « High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate « DC/DC Power Supplies

文件：3.33929 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子