OptiMOS3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS

文件：328.28 Kbytes 页数：9 Pages

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丝印：057N08NS；Package：TDSON-8；OptiMOS3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS

文件：328.28 Kbytes 页数：9 Pages

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N 沟道功率 MOSFET

OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。 • 优化直流-直流转换器技术\n• 出色的栅极电荷 x R DS(ON) 产品 (FOM)\n• 出色的耐热性\n• 双面冷却\n• 寄生电感低\n• 纤薄外形 (<0.7mm)\n• N通道，正常电平\n• 100% 经过雪崩测试\n• 无铅镀层;符合 RoHS\n\n\n优势:;

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Metal Oxide Semiconductor Field Effect Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applicatio

文件：598.19 Kbytes 页数：10 Pages

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OptiMOS3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS

文件：328.28 Kbytes 页数：9 Pages

INFINEON

英飞凌