Metal Oxide Semiconductor Field Effect Transistor

文件：1.57399 Mbytes 页数：13 Pages

INFINEON

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.57399 Mbytes 页数：13 Pages

INFINEON

英飞凌

N 沟道功率 MOSFET

凭借 OptiMOS™ 5 25V 和 30V 产品系列，英飞凌通过在待机和全功率运行中实现高功率密度和高能效来提供基准解决方案。 • 同类中较为出色的导通电阻\n• 基准开关性能 (极低的 R on x Q g 和 R on x Q gd品质因数)\n• 符合 RoHS 标准且无卤素\n• 优化的 EMI 行为 (集成阻尼网络)\n\n优势:\n• 高效率\n• 具有 S3O8 或功率块封装的极高功率密度\n• 降低整体系统成本\n• 在高开关频率下操作;

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.65174 Mbytes 页数：12 Pages

INFINEON

英飞凌

CURRENT LIMITING DIODE

DESCRIPTION The CENTRAL SEMICONDUCTOR CCL0035 Series types are silicon field effect current regulator diodes designed for applications requiring a constant current over a wide voltage range. These devices are manufactured in the cost effective DO-35 double plug case, which provides many benefits

文件：75.84 Kbytes 页数：2 Pages

CENTRAL

CURRENT LIMITING DIODE

CURRENT LIMITING DIODE Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

文件：73.74 Kbytes 页数：1 Pages

DIGITRON