BSC047N08NS3G-TP资料使用说明书供应代理-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
BSC047N08NS3G-TP	文件：5.94207 Mbytes Page：6 Pages	N-Channel Enhancement Mode MOSFET Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge 文件：5.94207 Mbytes 页数：6 Pages	TECHPUBLIC 台舟电子	TECHPUBLIC
BSC047N08NS3	文件：301.27 Kbytes Page：9 Pages	OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS 文件：301.27 Kbytes 页数：9 Pages	Infineon 英飞凌	Infineon
BSC047N08NS3G	文件：301.27 Kbytes Page：9 Pages	OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS 文件：301.27 Kbytes 页数：9 Pages	Infineon 英飞凌	Infineon
BSC047N08NS3G	文件：327.01 Kbytes Page：9 Pages	OptiMOS3 Power-Transistor 文件：327.01 Kbytes 页数：9 Pages	Infineon 英飞凌	Infineon

更多BSC047N08NS3G-TP供应商更新时间2025-10-6 11:04:00