New OptiMOS??40V and 60V

文件：1.02174 Mbytes 页数：2 Pages

Infineon

英飞凌

OptiMOSTM Power-MOSFET, 40 V

文件：1.62813 Mbytes 页数：13 Pages

Infineon

英飞凌

OptiMOSTM Power-MOSFET, 40 V

文件：1.62813 Mbytes 页数：13 Pages

Infineon

英飞凌

20V-300V N-Channel Power MOSFET

New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer • Optimized for synchronous rectification\n• 15% lower R DS(on) than alternative devices\n• 31% improvement of FOM over similar devices\n• Integrated Schottky-like diode\n• RoHS compliant - halogen free\n• MSL1 rated\n\n优势:\n• Highest system efficiency\n• Less paralleling required\n• Increas;

Infineon

英飞凌