Very Low Power/Voltage CMOS SRAM 64K X 16 bit

文件：254 Kbytes 页数：9 Pages

BSI

连邦科技

Very Low Power/Voltage CMOS SRAM 64K X 16 bit

„DESCRIPTION\nThe BS616LV1015 is a high performance, very low  power CMOS Static Random Access Memory organized  as 65,536 words  by  16  bits  and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology  and circuit techniques provide both high speed and low power featur • Vcc operation voltage : 4.5V ~ 5.5V\n• High speed access time :\n• Automatic power down when chip is deselected\n• Fully static operation\n• Easy expansion with CE and OE options\n• I/O Configuration x8/x16 selectable by LB and UB pin;

Brilliance

华晨汽车

Very Low Power/Voltage CMOS SRAM 64K X 16 bit

文件：254 Kbytes 页数：9 Pages

BSI

连邦科技

Very Low Power/Voltage CMOS SRAM 64K X 16 bit

文件：254 Kbytes 页数：9 Pages

BSI

连邦科技

Very Low Power/Voltage CMOS SRAM 64K X 16 bit

文件：254 Kbytes 页数：9 Pages

BSI

连邦科技

Very Low Power/Voltage CMOS SRAM 64K X 16 bit

文件：254 Kbytes 页数：9 Pages

BSI

连邦科技

Very Low Power/Voltage CMOS SRAM 64K X 16 bit

文件：254 Kbytes 页数：9 Pages

BSI

连邦科技

Very Low Power/Voltage CMOS SRAM 64K X 16 bit

文件：254 Kbytes 页数：9 Pages

BSI

连邦科技

Very Low Power/Voltage CMOS SRAM 64K X 16 bit

文件：254 Kbytes 页数：9 Pages

BSI

连邦科技

Very Low Power/Voltage CMOS SRAM 64K X 16 bit

文件：254 Kbytes 页数：9 Pages

BSI

连邦科技