Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM

Brilliance

华晨汽车

Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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未分类制造商

Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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未分类制造商

Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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未分类制造商

Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商