丝印：BS6；Package：SMA；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W • Reverse standoff

文件：210.65 Kbytes 页数：12 Pages

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Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

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Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

[BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7

文件：256.89 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

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