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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
BRI1N60	文件：864.03 Kbytes Page：6 Pages	N-CHANNEL MOSFET in a TO-251 Plastic Package	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
1N60	文件：71.1 Kbytes Page：1 Pages	GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N60	文件：80.99 Kbytes Page：2 Pages	SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar	FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司	FORMOSA
1N60	文件：41.79 Kbytes Page：1 Pages	JEDECDO-7PACKAGE JEDECDO-7PACKAGE	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
1N60	文件：143.99 Kbytes Page：8 Pages	1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
1N60	文件：197.55 Kbytes Page：4 Pages	SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi	LittelfuseLittelfuse Inc. 力特力特公司	Littelfuse
1N60	文件：310.86 Kbytes Page：2 Pages	GERMANIUMDIODES Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione	DAESAN Daesan Electronics Corp.	DAESAN
1N60	文件：51.09 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODE VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司	BILIN
1N60	文件：127.55 Kbytes Page：1 Pages	600VN-ChannelMOSFET Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃	TGS Tiger Electronic Co.,Ltd	TGS
1N60	文件：138.98 Kbytes Page：2 Pages	SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃	TGS Tiger Electronic Co.,Ltd	TGS
1N60	文件：72.86 Kbytes Page：3 Pages	SMALLSIGNALSCHOTTKYDIODES FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司	JINANJINGHENG
1N60	文件：239.88 Kbytes Page：2 Pages	SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS Features: HighReliability LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching	WEITRONWEITRON 威堂電子科技	WEITRON
1N60	文件：1.04021 Mbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension	SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司	SY
1N60	文件：947.3 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODE FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio	DIOTECH Diotech Company.	DIOTECH
1N60	文件：275.21 Kbytes Page：6 Pages	1.2Amps,600/650VoltsN-CHANNELMOSFET	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
1N60	文件：419.26 Kbytes Page：3 Pages	SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage&	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
1N60	文件：75.67 Kbytes Page：1 Pages	Lowforwardvoltagedrop-lowpowerconsumption FEATURES Lowforwardvoltagedrop -lowpowerconsumption Thirtyyearsofprovenreliability -onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgicallybonded	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N60	文件：365.313 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行	SUNMATE
1N60	文件：365.394 Kbytes Page：2 Pages	45VDetectionswitchtube	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行	SUNMATE
1N60	文件：434.49 Kbytes Page：6 Pages	N-CHANNELMOSFET DESCRIPTION 1N601N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu	ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司	ZSELEC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	BRI1N60	蓝箭	22+	TO-251	571699	只做原装进口免费送样!!	询价
深圳兆威电子有限公司	BRI1N60	VB	2019	TO-251	55000	绝对原装正品假一罚十!	询价
深圳市宏捷佳电子科技有限公司	BRI1N60	B	23+	TO-251	12300	全新原装真实库存含13点增值税票!	询价
深圳市澳亿芯电子科技有限公司	BRI1N60	蓝箭	12+PBF	TO-251	571699	优势	询价
深圳市国宇半导体科技有限公司	BRI1N60	B	23+	TO-251	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	BRI1N60	BLUEROCKET	2022+	TO-251	50000	原厂代理终端免费提供样品	询价
深圳市科恒伟业电子有限公司	BRI1N60	蓝箭	21+	TO-251	9852	只做原装正品现货!或订货假一赔十!	询价
贸泽芯城（深圳）电子科技有限公司	BRI1N60	BLUEROCKET	21+ROHS	TO251	28888	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市维尔达电子有限公司	BRI1N60	vishay	2023+	TO-251	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市创新迹电子有限公司	BRI1N60	蓝箭	2022+	TO-251	30000	进口原装现货供应,原装假一罚十	询价

更多BRI1N60供应商更新时间2024-5-1 11:03:00

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