首页 >BRB4N60>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

BRB4N60

N-CHANNEL MOSFET in a TO-263 Plastic Package

文件:800.62 Kbytes 页数:6 Pages

FOSHAN

蓝箭电子

BRB4N60

高压MOS>200V

BlueRocket

蓝箭电子

MGP4N60E

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件:124.46 Kbytes 页数:6 Pages

MOTOROLA

摩托罗拉

MGP4N60E

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件:120.94 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MGP4N60ED

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

文件:146.13 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

技术参数

  • PD:

    100 (W)

  • ID:

    4 (A)

  • V(BR) DSS:

    600 (V)

  • RDS(on) (MAX):

    2.5 Ω  2 ID(A)  10 VGS(V)

  • VGS(Th):

    2.0~4.0 V  250 ID(μA)

  • 封装:

    TO-263 Package

供应商型号品牌批号封装库存备注价格
Altech Corp.
2022+
51
全新原装 货期两周
询价
STANLEY
20+
SMD
83000
LED原装优势主营型号-可开原型号增税票
询价
STANLEY
2023+
SMD
5600
安罗世纪电子只做原装正品货
询价
STANLEY
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
STANLEY
23+
SMD1206X2
50000
全新原装正品现货,支持订货
询价
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
询价
STANLEY
2026+
SMD1206X2
2500
原装正品 假一罚十!
询价
STANLEY
25+
SMD1206X2
90000
全新原装现货
询价
STANLEY
3
2500
询价
STANLEY
25+23+
1206
27941
绝对原装正品全新进口深圳现货
询价
更多BRB4N60供应商 更新时间2026-4-18 9:50:00