首页 >BR382SLASHD>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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iscSiliconNPNPowerTransistor DESCRIPTION ·Collector–EmitterSustainingVoltage:VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage:VCE(sat)=0.5V(Max)@IC=1A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitchmodepowersupplies. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION TheBUL381andBUL382manufacturedusinghighvoltageMultiepitaxialMesatechnologyfor cost-effectivehighperformance.TheyuseaHollowEmitterstructuretoenhanceswitching speeds.TheBULseriesisdesignedforuseinlightingapplicationsandlowcostswitch-modepower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS DESCRIPTION TheBUL381DismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.TheBULseriesisdesignedforuseinlightingapplicationsandlowcostswitch-modepowersupplies. ■STMicroelectronicsPREFERREDSALESTYPE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
SIPMOSPowerTransistor(400V12.5A0.4OhmTO-218AA) SIPMOS®PowerTransistor •Nchannel •Enhancementmode •FREDFET | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12.5A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PCIEBusSubsIdIaryandPrIntoutchip | WCHNanjing Qinheng Microelectronics Co., Ltd. 沁恒微电子南京沁恒微电子股份有限公司 | WCH | ||
T-13/4MidgetFlangeBase T-13/4MidgetFlangeBase | CML Chicago Miniature Lamp,inc | CML | ||
MidgetFlangeBase | VCC Visual Communications Company | VCC | ||
SmallSignalTransistorNPN-LowVCE(SAT)TransistorChip PROCESSDETAILS DieSize26x26MILS DieThickness5.9MILS BaseBondingPadArea5.5x5.5MILS EmitterBondingPadArea5.5x5.5MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-12,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
Throughholeshuntresistor ConstantCurrentupto100amps(0.3mΩ) HighConductivityCopperConnectors ExcellentLong-termStability Max.SolderTemperatureupto350ºC/30s. AEC-Q200qualified RoHSandREACHCompliant | VITROHM vitrohm | VITROHM |
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