BR25G512FVT-3中文资料SPI BUS EEPROM数据手册ROHM规格书

描述 Description

BR25G512FVT-3是512kbit SPI BUS 接口的串行EEPROM。

特性 Features

• High Speed Clock Action up to 10MHz (Max)
• Wait Function by HOLDB Terminal
• Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
• 1.8V to 5.5V Single Power Source Operation Most Suitable for Battery Use
• Up to 128 Bytes in Page Write Mode.
• For SPI BUS interface (CPOL, CPHA) = (0, 0), (1, 1)
• Self-timed Programming Cycle
• Low Current Consumption
·At Write Action (5V) : 0.7mA (Typ)
·At Read Action (5V) : 2.4mA (Typ)
·At Standby Action (5V) : 0.1µA (Typ)
• Address Auto Increment Function at Read Action
• Prevention of Write Mistake
·Write Prohibition at Power On
·Write Prohibition by Command Code (WRDI)
·Write Prohibition by WPB Pin
·Write Prohibition Block Setting by Status Registers (BP1, BP0)
·Prevention of Write Mistake at Low Voltage
• More than 100 years Data Retention
• More than 1 Million Write Cycles
• Bit Format 64K×8
• Initial Delivery Data
Memory Array: FFh
Status Register: WPEN, BP1, BP0 : 0

简介

BR25G512FVT-3属于集成电路（IC）的存储器。由制造生产的BR25G512FVT-3存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。