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2PB709AR

丝印:BR;Package:SC-59;PNP general purpose transistor

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件:281 Kbytes 页数:7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2SB709AR

丝印:BR;Package:SOT-23;Power Dissipation

● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C)

文件:2.06137 Mbytes 页数:3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SC2412/K-R

丝印:BR;Package:SOT-23;NPN Transistors

Features ● Low Cob.Cob=2.0pF (Typ.)

文件:1.11866 Mbytes 页数:2 Pages

KEXIN

科信电子

2SC2412K-R

丝印:BR;Package:SOT-23;NPN Transistors

Features ● Low Cob.Cob=2.0pF (Typ.)

文件:543.05 Kbytes 页数:3 Pages

YFWDIODE

佑风微

2SC4081-R

丝印:BR;Package:SOT-323;NPN Transistor

■ Features ● Low Cob. Cob=2.0pF (Typ.) ● Complementary to 2SA1576A

文件:626.23 Kbytes 页数:4 Pages

YFWDIODE

佑风微

2SC4617R

丝印:BR;Package:SOT-523;Plastic-Encapsulate Transistors

FEATURES ● Low Cob:Cob=2.0pF(Typ) ● Complement to 2SA1774

文件:675.7 Kbytes 页数:3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

4.0SMF17A

丝印:BR;Package:SOD-123;3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glass passivated chip 400W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. Meet AEC-Q101 requirement

文件:3.27335 Mbytes 页数:6 Pages

UNSEMI

优恩半导体

6.0SMAJ17CA

丝印:BR;Package:DO-214AC;5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glass passivated chip 600W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01% Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260°C/10s at terminals. RoHS compliant Features

文件:3.35089 Mbytes 页数:6 Pages

UNSEMI

优恩半导体

824500171

丝印:BR;WE-TVSP Power TVS Diode

General Information: It is recommended that the temperature of the component does not exceed +150°C under worst case conditions Operating Temperature -65 up to +150 °C Storage Conditions (in original packaging)

文件:658.74 Kbytes 页数:8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

824521171

丝印:BR;WE-TVSP Power TVS Diode

General Information: It is recommended that the temperature of the component does not exceed +150°C under worst case conditions Operating Temperature -65 up to +150 °C Storage Conditions (in original packaging)

文件:539.31 Kbytes 页数:7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

详细参数

  • 型号:

    BR

  • 功能描述:

    TVS 二极管 - 瞬态电压抑制器 17V 600W SMB Bidirectional

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 极性:

    Bidirectional

  • 击穿电压:

    58.9 V

  • 钳位电压:

    77.4 V

  • 峰值浪涌电流:

    38.8 A

  • 封装/箱体:

    DO-214AB

  • 最小工作温度:

    - 55 C

  • 最大工作温度:

    + 150 C

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更多BR供应商 更新时间2025-9-21 14:14:00