SMD CHIP PT

BrightLED

佰鸿

Small Signal Transistors NPN - Amp Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.7 x 19.7 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：38.43 Kbytes 页数：1 Pages

Central

1W AF Output, Electronic Governor, DC-DC Converter Applications

1W AF Output, Electronic Governor, DC-DC Converter Applications 2SB698, 2SD734, B698, D734

文件：88.54 Kbytes 页数：3 Pages

SANYO

三洋

PNP SILICON POWER DARLINGTON TRANSISTOR

FEATURES * 625mW POWER DISSIPATION * Very High hFE at High Current (5A) * Extremely Low VCE(sat) at High Current (1A)

文件：74.67 Kbytes 页数：3 Pages

Zetex