AC/DC非隔离低PF

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Dual N-Channel Enhancement Mode Field Effect Transistor

文件：500.43 Kbytes 页数：5 Pages

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华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：108.19 Kbytes 页数：4 Pages

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华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 6.0A, RDS(ON) = 36mW @VGS = 10V. RDS(ON) = 42mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RDS(ON) = 75mW @VGS = 2.5V. Lead free product is acquired.

文件：889.37 Kbytes 页数：4 Pages

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