高集成度低功耗降压型恒压芯片

BP8501CH 是一款高集成度低待机功耗的非隔离降压型恒压驱动芯片。适用于 85Vac~265Vac 全电压输入的非隔离电源 • 低待机功耗 <20mw\n• 固定 3.3V或 5V输出电压，可选择\n• 支持直接输出 3.3V\n• 内部集成 650V 功率管\n• 集成高压启动和供电电路\n• 减小音频噪声的降幅调制技术\n• 改善 EMI的抖频技术\n• 内置软启动\n• 保护功能;

BPS

晶丰明源

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

文件：97.38 Kbytes 页数：12 Pages

NEC

瑞萨

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

文件：97.38 Kbytes 页数：12 Pages

NEC

瑞萨

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

文件：97.38 Kbytes 页数：12 Pages

NEC

瑞萨