SSR磁耦驱动-副边

BPS

晶丰明源

N-CHANNEL POWER MOSFETS

FEATURES • Low RDs(on) at high voltage • Improved inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysilicon gate cell structure • Low input capactiance • Extended safe operating area • Improved high temperature reliablitiy • TO-3 package (High vol

文件：211.24 Kbytes 页数：5 Pages

SAMSUNG

三星

1.0 mm X 4.0 mm Series

文件：32.03 Kbytes 页数：1 Pages

PANASONIC

松下

AF Power Amplifier (5W 5W min, THD = 1.0)

Features • Small and slim package with 25.5 mm height. • Capable of guaranteeing substrate temperature 125°C, thereby reducing heat sink. • Excellent cost performance.

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SANYO

三洋