VRLA Rechargeable Battery

文件：207.14 Kbytes 页数：1 Pages

ETC

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB10-12F is Designed for 12.5 V, Class C Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System

文件：17.79 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB10-12S is Designed for 12.5 V, High Band Application. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System

文件：16.75 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VMB10-12Sis Designed for 12.5 V, Medium Band Class C Application. FEATURES: • Common Emitter • PG= 13 dB at 10W/88MHz • Omnigold™ Metalization System

文件：16.69 Kbytes 页数：1 Pages

ASI