BS100D

WideWavelengthBandTypePhotodiode

BSF-C100

BandStopFilter

BSF-C100+

BandStopFilter

BSP100

N-channelenhancementmodeTrenchMOStransistor

VDSS=30V ID=6A RDS(ON)≤100mΩ(VGS=10V) RDS(ON)≤200mΩ(VGS=4.5V) GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fasts

BSP100

N-channelenhancementmodeTrenchMOSÔtransistor

FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance GENERALDESCRIPTION N-channelenhancementmode field-effecttransistorinaplastic envelopeusing’trench’ technology. Applications:- •Motorandrel

BSS100

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

•Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

BSS100

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

BST100

P-channelenhancementmodeverticalD-MOStransistor

DESCRIPTION P-channelverticalD-MOStransistorTO-92variantenvelopeandintendedforuseinrelay,high-speedandline-transformerdrivers. FEATURES •VerylowRDS(on) •DirectinterfacetoC-MOS •High-speedswitching •Nosecondbreakdown

BT100

BatteryCapacityTester

ACmilliohmmeterchecksBatteryConditioninsecondsWhilethebatteryisinservice Features: •On-linetestingwithoutdisconnectingbattery •Built-indataloggerstoresupto999tests •SimultaneouslymeasuresDCVoltageandACMilliohms •Autopoweroff •IncludesWindows®95/98/NT

BT100

Intel®AtomTME3800SeriesMini-ITX