Mechanical Cam Switches

BNS 816-B02-NA-12-605-11-S90R Basic features Approval/Conformity CE UKCA WEEE Basic standard IEC 60947-5-2 Operating principle 1-2. Switch position: Inductive Version Inductive

文件：161.52 Kbytes 页数：2 Pages

Balluff

巴鲁夫

Built in SBD N Channel Power MOS FET High Speed Power Switching

文件：142.41 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance • Pb-free • Halogen-free

文件：111.91 Kbytes 页数：7 Pages

RENESAS

瑞萨

MURATA
DIP-6

MuRata

村田

上传：齐创科技(上海,北京,青岛)有限公司

MURATA
DIP6

MuRata

村田

上传：深圳市凌旭科技有限公司