BUP311D

IGBTWithAntiparallelDiodePreliminarydatasheet

BUP311D

HighSpeed2-Technology

•Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

BUZ311

SIPMOSPowerTransistor(NchannelEnhancementmode)

•Nchannel •Enhancementmode

BUZ311

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

C311

MONOLITHICWIDEBANDCRTDISTORTIONCORRECTIONDEVICE

C311

MOLOLITHICWIDEBANDCRTDISTORTIONCORRECTIONDEVICE

FEATURES •16or24pinceramicdip •Minimumofexternalcomponentsrequired •Easilyadjustsforyokeerrors •Accuracybetterthan0.5Max(C312) •Bandwidthcompatiblewith10MHzsystems •Bothgeometryandfocusavailable

C311

MAGNETICSFORRF,POWER,FILTERANDDATAAPPLICATIONS

C311C

PRECISIONVOLTAGECOMPARATORS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

C-311E

SINGLEDIGITDISPLAY

[Para-Light] C/A-301X,C/A-311XSINGLEDIGITDISPLAY

C-311E-A

0.3INCHSINGLEDIGITDISPLAY