BN1L4M中文资料下载库存现货瑞萨NEC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
BN1L4M	文件：132.52 Kbytes Page：2 Pages	PNP SILICON TRANSISTOR DESCRIPTION The BN1L4M is designed for use in medium speed switching circuit. FEATURE ● Bias resistors built-in type PNP transistor equivalent circuit. 文件：132.52 Kbytes 页数：2 Pages	NEC 瑞萨	NEC
BN1L4M	文件：300 bytes Page：1 Pages	PNP SILICON TRANSISTOR	Renesas 瑞萨	Renesas
BN1L4Z	文件：85.1 Kbytes Page：4 Pages	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BA1L4Z 文件：85.1 Kbytes 页数：4 Pages	NEC 瑞萨	NEC
BN1L4Z	文件：239.7 Kbytes Page：6 Pages	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BA1L4Z 文件：239.7 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
FA1L4	文件：160.4 Kbytes Page：4 Pages	MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES • Resistors Built-in TYPE • Complementary to FN1L4L 文件：160.4 Kbytes 页数：4 Pages	NEC 瑞萨	NEC

更多BN1L4M供应商更新时间2026-1-17 10:50:00