包装：托盘 类别：RF/IF，射频/中频和 RFID 射频屏蔽 描述：RF SHIELD 1.583\

Laird Technologies EMI

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope. Intended for use in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.

文件：64.34 Kbytes 页数：12 Pages

PHI

飞利浦

P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Features • High Breakdown Voltage • High Input Impedance • Fast Switching Speed • Low Drain-Source On-Resistance • Specially Suited for Telephone Subsets

文件：62.55 Kbytes 页数：2 Pages

DIODES

美台半导体

DMOS Transistors (P-Channel)

FEATURES ♦ High breakdown voltage ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown ♦ Specially suited for telephone su

文件：238.81 Kbytes 页数：5 Pages

GE