BM875B12J34U1中文资料SiC MOSFET模块数据手册BYD规格书

描述 Description

BYD SiC Power Module BM875B12J34U1 uses latest Double sided Silver sintering technology and provides low switching loss as well as high short circuit capability,which introduce the advanced SiC mosfet chip,it is able to take on a perfect performance in various applications with switching frequencies in the range of 1-30KHz

特性 Features

• The 3rd generation semiconductor material-Silicon Carbide
• Blocking voltage 1200V
• Low RDS(on)
• Low Switching Losses
• Low Qg and Crss
• Low Inductive Design, Ls≤10nH
• Tvj op=175 ºC
• Direct Cooled Cu PinFin Base Plate
• High Performance Si3N4 Ceramic
• Integrated NTC temperature sensor

应用 Application

• Automotive Applications
• Hybrid Electrical Vehicles (H)EV
• Motor Drives
• Maximum applied voltage platform: 900V