Isolation Voltage 2500 Vrms 1ch Gate Driver Providing Galvanic Isolation

General Description The BM60060FV-C is a gate driver with an isolation voltage of 2500 Vrms. It has an I/O delay time of 210 ns, minimum input pulse width of 90 ns, and incorporates the fault signal output function, under voltage lockout (UVLO) function, short circuit protection (SCP, built-

文件：1.69504 Mbytes 页数：55 Pages

ROHM

罗姆

Isolation Voltage 2500 Vrms 1ch Gate Driver Providing Galvanic Isolation

General Description The BM60060FV-C is a gate driver with an isolation voltage of 2500 Vrms. It has an I/O delay time of 210 ns, minimum input pulse width of 90 ns, and incorporates the fault signal output function, under voltage lockout (UVLO) function, short circuit protection (SCP, built-

文件：1.69504 Mbytes 页数：55 Pages

ROHM

罗姆

内置绝缘电压2500Vrms的绝缘元件 1ch栅极驱动器

内置绝缘电压2500Vrms、输入输出延迟时间210ns、最小输入脉冲宽度90ns的绝缘元件的栅极驱动器。内置故障信号输出功能、防止低压故障功能（UVLO）、短路保护功能（SCP、内置检测电压温度特性校正功能）、检出短路时切断时间缩短功能、米勒钳位功能(MC)、温度监测功能、开关控制、栅极电阻切换功能、栅极状态监视功能。 • AEC-Q100 Qualified (Grade 1)\n• Fault Signal Output Function\n• Under Voltage Lockout Function\n• Short Circuit Protection Function\n• Temperature Compensation of Short Circuit Detection Voltage\n• Fast Turn Off Function for Short Circuit Protection\n• Soft Turn Off Function for Short Circuit Prot;

ROHM

罗姆

70 MHz Bandpass SAW Filter

文件：54.22 Kbytes 页数：1 Pages

VANLONG

60 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs o

文件：1.30457 Mbytes 页数：8 Pages

WOLFSPEED

60 W, 6.0 GHz, GaN HEMT Die

文件：618.74 Kbytes 页数：7 Pages

Cree

科锐