MOS(场效应管)

BORNSEMI

伯恩斯

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -5.1A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. RDS(ON) = 115mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：232.11 Kbytes 页数：4 Pages

CET

华瑞

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5.1A, RDS(ON) = 48mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. RDS(ON) = 115mW @VGS = -2.5V.

文件：628.62 Kbytes 页数：4 Pages

CET-MOS

华瑞

SOT-23 Plastic-Encapsulate MOSFETS

文件：957.4 Kbytes 页数：3 Pages

ZPSEMIZP Semiconductor

至尚臻品