VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply ov

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PHI

飞利浦

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLY88C is Designed for 12.5 V, High Band Application. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System

文件：17.74 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLY88C is Designed for 12.5 V, High Band Application. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

VHF power transistor

恩XP

Trans GP BJT NPN 18V 3A 4-Pin CRPM

NJS