UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

文件：75.59 Kbytes 页数：12 Pages

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UHF power transistor

DESCRIPTION\nNPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange.FEATURES\n• Emitter ballasting resistors for optimum temperature profile\n• Gold metallization ensures excellent reliability\n• Internal input and output • Emitter ballasting resistors for optimum temperature profile\n• Gold metallization ensures excellent reliability\n• Internal input and output matching for an easy design of wideband circuits.;

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