| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BLU99 | NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLU99 is Designed for use in UHF mobile radio transmitters aplications up to 470 MHZ FEATURES: • PG = 10.5 dB Min. at 470 MHz • Omnigold™ Metallization System 文件:17.83 Kbytes 页数:1 Pages | ASI | ASI | |
BLU99 | UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES • multi-base structure and diffused emitter-ballasting resistors for 文件:104.1 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
BLU99 | UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES • multi-base structure and diffused emitter-ballasting resistors for 文件:110.9 Kbytes 页数:17 Pages | PHI 飞利浦 | PHI | |
UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES • multi-base structure and diffused emitter-ballasting resistors for 文件:110.9 Kbytes 页数:17 Pages | PHI 飞利浦 | PHI | ||
UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES • multi-base structure and diffused emitter-ballasting resistors for 文件:110.9 Kbytes 页数:17 Pages | PHI 飞利浦 | PHI | ||
UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES • multi-base structure and diffused emitter-ballasting resistors for 文件:104.1 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES • multi-base structure and diffused emitter-ballasting resistors for 文件:110.9 Kbytes 页数:17 Pages | PHI 飞利浦 | PHI | ||
BLU99 | Trans GP BJT NPN 16V 0.8A 4-Pin CRPM | NJS | NJS | |
UHF power transistor | NJS | NJS |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
超高频/特高频 (UHF)_TR_输出极 (E)
- 封装形式:
贴片封装
- 极限工作电压:
36V
- 最大电流允许值:
0.8A
- 最大工作频率:
900MHZ
- 引脚数:
4
- 可代换的型号:
- 最大耗散功率:
4W
- 放大倍数:
- 图片代号:
G-56
- vtest:
36
- htest:
900000000
- atest:
0.8
- wtest:
4
技术参数
- Output Power:
5W
- Number of Elements per Chip:
1
- Minimum DC Current Gain:
25@0.6A@10V
- Maximum Transition Frequency:
4000(Typ)MHz
- Maximum Operating Temperature:
200°C
- Maximum Emitter Base Voltage:
3V
- Maximum DC Collector Current:
0.8A
- Maximum Collector Emitter Voltage:
16V
- Maximum Collector Base Voltage:
36V
- Material:
Si
- Configuration:
Single Dual Emitter
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
询价 | ||
PHI |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
PH |
24+ |
580 |
询价 | ||||
PHI |
23+ |
TO-55 |
850 |
专营高频管模块,全新原装! |
询价 | ||
PHL |
24+ |
SMD |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
PHI |
24+ |
224 |
现货供应 |
询价 | |||
PHI |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
PHI |
23+ |
SOT122A |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
ASI |
23+ |
TO |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ASI |
05+ |
TO |
600 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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