LDMOS S-band radar power transistor

General description 400 W LDMOS power transistor for S-band applications in the frequency range from 2700 MHz to 3100 MHz. Features and benefits  High efficiency  Excellent ruggedness  Designed for S-band radar applications  Excellent thermal stability  Easy power control  Integrate

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LDMOS S-band radar power transistor

400 W LDMOS power transistor for S-band applications in the frequency range from 2700 MHz to 3100 MHz • High efficiency\n• Excellent ruggedness\n• Designed for S-band radar applications\n• Excellent thermal stability\n• Easy power control\n• Integrated dual sided ESD protection enables excellent off-state isolation\n• High flexibility with respect to pulse formats\n• Internally matched for ease of u;

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Package：SOT-502A；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET

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Package：SOT-502A；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET LDMOS 32V SOT502A

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