BLP0427M9S20数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

20 W plastic LDMOS power transistor for general purpose applications at frequencies from 400 MHz to 2700 MHz.

特性 Features

• High efficiency
• Excellent ruggedness
• Designed for broadband operation
• Excellent thermal stability
• High power gain
• Integrated ESD protection
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

应用 Application

• Radars & avionics
• Broadcast transmitter applications
• Communications
• Industrial, scientific and medical applications

简介

BLP0427M9S20属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLP0427M9S20晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。