BLP012N08中文资料屏蔽栅金属氧化物半导体场效应管(SGT MOSFETs)数据手册Belling规格书
BLP012N08规格书详情
描述 Description
BLP012N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.
特性 Features
• Fast switching
• Low On-Resistance
• Low gate charge
• Low reverse transfer capacitances
• High avalanche ruggedness
• RoHS product
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BELLING/上海贝岭 |
2024+ |
TOLL8 |
9999 |
精工代理直销*低价 |
询价 | ||
BL(上海贝岭) |
2025+ |
TOLL-8 |
129270 |
询价 | |||
BELLING/上海贝岭 |
25+ |
TOLL8 |
820000 |
全新原厂原装正品支持实单 |
询价 | ||
BELLING上海贝岭 |
2022 |
TO263-2L |
15 |
全新原装正品现货 |
询价 | ||
上海贝岭 |
22+ |
TOLL8 |
150000 |
上海贝岭全系列在售,优势渠道 |
询价 | ||
上海贝岭 |
23+ |
TO220 TO263 TO263-7 TO247 |
100000 |
原装正品假一罚十,代理渠道价格优 |
询价 | ||
贝岭 |
23 |
TO263-7 |
20000 |
询价 |
