024N10, LV, 低压, SGT

\n024N10, LV, 低压, SGT • Fast Switching\n• Low On-Resistance \n• Low Gate Charge\n• Low Reverse Transfer Capacitances\n• High Avalanche Ruggedness\n• RoHS Product ;

Belling

上海贝岭

屏蔽栅金属氧化物半导体场效应管(SGT MOSFETs)

BLP024N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. • Fast Switching\n• Low Gate Charge\n• High Avalanche Ruggedness\n• RoHS Product \n;

Belling

上海贝岭

SMD

Mini-circuits

上传：深圳市益中天科技发展有限公司

SOT1483

Ampleon(安谱隆)

上传：深圳市乐峰达科技有限公司

SMD

Ampleon(安谱隆)

上传：深圳市乐峰达科技有限公司