沟槽栅金属氧化物半导体场效应管

\n The BLM8205BF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. • ● High density cell design for ultra low Rdson\n• ● Fully characterized Avalanche voltage and current\"\n• ;

Belling

上海贝岭

20.2 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER

The RF Line High Output Power Doubler 860 MHz CATV Amplifier • Specified for 77, 110 and 128–Channel Performance • Broadband Power Gain - @ f = 40–860 MHz Gp = 20.2 dB (Typ) • Broadband Noise Figure NF = 7 dB (Typ) @ 860 MHz • All Gold Metallization • 7 GHz fT Ion–Implanted Transisto

文件：55.3 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉

6-Pin DIP Optoisolators High Voltage Transistor Output(400 Volts)

The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol

文件：295.71 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

NICAM QPSK DEMODULATOR

DESCRIPTION The TDA8205 is essentially divided into two signal processing sections. The first section handles all the NICAM signal acquisition, the QPSK demodulator and clock and data recovery circuits. The key point to note about this section is the dual frequency synthesiser. By use of only o

文件：163 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体