沟槽栅金属氧化物半导体场效应管

\n The BLM8205BF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. • ● High density cell design for ultra low Rdson\n• ● Fully characterized Avalanche voltage and current\"\n• ;

Belling

上海贝岭

N-channel Double MOSFET in a SOT23-6 Plastic Package

文件：1.41893 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 4.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TSSOP-8 for Surface Mount Package.

文件：123.43 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel 25-V (D-S) MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs

文件：939.86 Kbytes 页数：8 Pages

VBSEMI

微碧半导体