沟槽栅金属氧化物半导体场效应管

\n The BLM40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.\n • ● High density cell design for ultra low Rdson\n• ● Fully characterized Avalanche voltage and current\n;

Belling

上海贝岭

P-Channel 40 V (D-S) MOSFET

文件：1.00279 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

NCE P-Channel Enhancement Mode Power MOSFET

文件：403.85 Kbytes 页数：7 Pages

NCEPOWER

新洁能

P-channel Enhancement Mode Power MOSFET

Features VDS= -30V, ID= -9A RDS(ON)

文件：1.86141 Mbytes 页数：5 Pages

Bychip

百域芯