沟槽栅金属氧化物半导体场效应管

\n The BLM40P05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. • ● High density cell design for ultra low Rdson\n• ● Fully characterized Avalanche voltage and current;

Belling

上海贝岭

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文件：1.00058 Mbytes 页数：6 Pages

LEIDITECH

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NCEPOWER

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VBSEMI

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