LDMOS driver transistor

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHzrange. Easy power control\nIntegrated dual side ESD protection\nHigh flexibility with respect to pulse formats\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (0.5 GHz to 1.4 GHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Su;

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LDMOS driver transistor

General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Features and benefits  Easy power control  Integrated dual side ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excelle

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Package：SOT-1135B；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 100V 17DB SOT1135B

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MUR

MUR

上传：深圳市铨博晟科技有限公司

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QFN

Ampleon

安谱隆

上传：深圳市长旗科技有限公司