Power LDMOS transistor

General description 260 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features and benefits ■ Excellent ruggedness ■ High-efficiency ■ Low Rth providing excellent thermal stability ■ Designed for broadband operati

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恩XP

Power LDMOS transistor

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PHI

飞利浦

Power LDMOS transistor

恩XP

恩智浦

Package：SOT-539B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 15.9DB SOT539B

Ampleon

安谱隆

Package：SOT-539B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 15.9DB SOT539B

Ampleon

安谱隆