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BLF8G10LS-270

Power LDMOS transistor

Features and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Designed for broadband operation (820 MHz to 960 MHz)  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excel

文件:236.17 Kbytes 页数:12 Pages

恩XP

恩XP

BLF8G10LS-270

Power LDMOS transistor

270 W LDMOS power transistor for base station applications at frequencies from 820 MHz to 960 MHz. Excellent ruggedness\nHigh efficiency\nLow Rth providing excellent thermal stability\nDesigned for broadband operation (820 MHz to 960 MHz)\nLower output capacitance for improved performance in Doherty applications\nDesigned for low memory effects providing excellent pre-distortability\nInternally m;

Ampleon

安谱隆

BLF8G10LS-270GV

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件:9.37507 Mbytes 页数:130 Pages

恩XP

恩XP

BLF8G10LS-270_15

Power LDMOS transistor

文件:234.69 Kbytes 页数:12 Pages

PHI

PHI

PHI

BLF8G10LS-270V_15

Power LDMOS transistor

文件:250.79 Kbytes 页数:17 Pages

PHI

PHI

PHI

BLF8G10LS-270GV

Power LDMOS transistor

270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz. Excellent ruggedness\nDevice can operate with the supply current delivered through the video leads\nHigh efficiency\nLow thermal resistance providing excellent thermal stability\nDesigned for broadband operation\nLower output capacitance for improved performance in Doherty applications\nDesigned for;

Ampleon

安谱隆

BLF8G10LS-270V

Power LDMOS transistor

270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz. Excellent ruggedness\nDevice can operate with the supply current delivered through the video leads\nHigh efficiency\nLow thermal resistance providing excellent thermal stability\nDesigned for broadband operation\nLower output capacitance for improved performance in Doherty applications\nDesigned for;

Ampleon

安谱隆

BLF8G10LS-270,118

Package:SOT-502B;包装:托盘 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:RF FET LDMOS 65V 18.5DB SOT502B

Ampleon USA Inc.

Ampleon USA Inc.

BLF8G10LS-270GV,12

Package:SOT-1244C;包装:托盘 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:RF FET LDMOS 65V 19.5DB SOT1244C

Ampleon USA Inc.

Ampleon USA Inc.

BLF8G10LS-270GVJ

Package:SOT-1244C;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:RF FET LDMOS 65V 19.5DB SOT1244C

Ampleon USA Inc.

Ampleon USA Inc.

技术参数

  • GP (dB):

    18.5

  • PL(AV) (W):

    67.0

  • Die Technology:

    LDMOS

  • VDS (V):

    28.0

  • ηD (%):

    33.0

  • PL(1dB) (W):

    270.0

  • PL(1dB) (dBm):

    54.3

  • Test Signal:

    2-c W-CDMA

  • Fmin (MHz):

    820

  • Fmax (MHz):

    960

  • Status:

    Not for design in

  • Matching:

    I/O

供应商型号品牌批号封装库存备注价格
恩XP
24+
标准封装
12048
全新原装正品/价格优惠/质量保障
询价
恩XP
2019+
SOT502B
6992
原厂渠道 可含税出货
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恩XP
23+
1688
房间现货库存:QQ:373621633
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恩XP
24+
SMD
1680
NXP专营品牌进口原装现货假一赔十
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恩XP
2026+
SOT502B
12500
全新原装正品,本司专业配单,大单小单都配
询价
MOTOROLA/摩托罗拉
24+
TO-59
400
价格优势
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恩XP
23+
TO-59
8510
原装正品代理渠道价格优势
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原装
1922+
8600
莱克讯原厂货源每一片都来自原厂原装现货薄利多
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恩XP
23+
SOT502B
50000
全新原装正品现货,支持订货
询价
恩XP
23+
SOT502B
50000
全新原装正品现货,支持订货
询价
更多BLF8G10LS-270供应商 更新时间2026-2-4 22:59:00