UHF power LDMOS transistor

General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 350 mA: ◆ Average output power = 2.5 W

文件：46.14 Kbytes 页数：8 Pages

PHI

PHI

Power LDMOS transistor

General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 360 mA: ♦ Average output power = 2.5 W

文件：88.93 Kbytes 页数：12 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

UHF power LDMOS transistor

General description\n45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. ■ Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 350 mA:\n   ◆ Average output power = 2.5 W\n   ◆ Power gain = 17 dB (typ)\n   ◆ Efficiency = 14 %\n   ◆ ACPR = −50 dBc\n■ Easy power control\n■ Integrated ESD protection\n■ Exce;

恩XP

Package：SOT-608A；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 19.2DB SOT608A

Ampleon USA Inc.

Package：SOT-608A；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 19.2DB SOT608A

Ampleon USA Inc.