BLF6G10-135RN分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

General description

135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

特性 Features

■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA:

◆ Average output power = 26.5 W

◆ Power gain = 21.0 dB

◆ Efficiency = 28.0

◆ ACPR = −39 dBc

■ Easy power control

■ Integrated ESD protection

■ Enhanced ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (700 MHz to 1000 MHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications

■ RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range