Power LDMOS transistor

A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band. • Easy power control\n• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor\n• Excellent ruggedness VSWR > 65 : 1\n• High efficiency\n• Excellent thermal stability\n• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安谱隆

Power LDMOS transistor

General description A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band. Features and benefits  Easy power control  Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor  Excellen

文件：1.36702 Mbytes 页数：14 Pages

AMPLEON

安谱隆

Package：SOT-539B；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET SOT539 TRAY

Ampleon USA Inc.

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文件：244.41 Kbytes 页数：4 Pages

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文件：81.76 Kbytes 页数：3 Pages

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