Power LDMOS transistor

General description A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. Features and benefits  Easy power control  Integrated dual sided ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability

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AMPLEON

安谱隆

Power LDMOS transistor

A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. • Easy power control\n• Integrated dual sided ESD protection\n• Excellent ruggedness\n• High efficiency\n• Excellent thermal stability\n• Designed for broadband operation (HF to 500 MHz)\n• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS);

Ampleon

安谱隆

Package：SOT-539B；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLF189XRA/SOT539/TRAY

Ampleon USA Inc.

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features ● High-power output, high-efficiency : PO = 5.5 mW (typ.) ● Fast response and high-speed modulation capability : tr, tf = 20 ns (typ.) ● Infrared light emission close to monochromatic light : λP = 880 nm

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PANASONIC

松下

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features ● High-power output, high-efficiency : PO = 5.5 mW (typ.) ● Fast response and high-speed modulation capability : tr, tf =20 ns (typ.) ● Infrared light emission close to monochromatic light : λP = 880 nm(

文件：44.03 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon Complementary Transistors High Voltage Amplifier & Driver

Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA • High Power Dis

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NTE