BLF174XR

Power LDMOS transistor

Generaldescription A600WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto128MHzband. Featuresandbenefits Easypowercontrol IntegratedESDprotection Excellentruggedness Highefficiency Excellentthermalstability Designed

BLF174XR

Power LDMOS transistor; Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (HF to 128 MHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances\n;

A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.\n\n

BLF174XR

Power LDMOS transistor;

BLF174XRS

Power LDMOS transistor; Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (HF to 128 MHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances\n;

A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.\n\n

BLF174XRS

Power LDMOS transistor

Generaldescription A600WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto128MHzband. Featuresandbenefits Easypowercontrol IntegratedESDprotection Excellentruggedness Highefficiency Excellentthermalstability Designed

BLF174XR_15

Power LDMOS transistor

BLF174XR,112

Package：SOT-1214A；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 110V 28DB SOT1214A

BLF174XRS,112

Package：SOT-1214B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 110V 28DB SOT1214B