Power LDMOS transistor

400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz and 1930 MHz to 1995 MHz\n\n • Excellent ruggedness\n• Low thermal resistance providing excellent thermal stability\n• Designed for low memory effects providing excellent digital pre-distortion capability\n• Integrated ESD protection\n• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)\n;

Ampleon

安谱隆

Package：SOT-1258-7；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET LDMOS 32V SOT1258-7

Ampleon USA Inc.

Package：SOT-1258-4；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 16.2DB SOT1258

Ampleon USA Inc.

TO-252

SI

上传：深圳市汇创佳电子科技有限公司

SOT23-5

MICRONE/微盟

上传：深圳广友电子有限公司