Power LDMOS transistor

General description 160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Features and benefits  Designed for broadband operation (1805 MHz to 2025 MHz)  Decoupling leads to enable improved video bandwidth  Excellent ruggedness  High efficiency

文件：1.3166 Mbytes 页数：14 Pages

Ampleon

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Power LDMOS transistor

文件：179.59 Kbytes 页数：14 Pages

PHI

飞利浦

Power LDMOS transistor

160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to2025 MHz. Designed for broadband operation (1805 MHz to 2025 MHz)\nDecoupling leads to enable improved video bandwidth\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nInternally matched for ease of use\nHigh power gain\nIntegrated ESD protection\nCompliant to Directive 2002/95/EC, regardi;

Ampleon

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Package：SOT-1275-1；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 15DB SOT12751

Ampleon

安谱隆

Package：SOT-1275-1；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 15DB SOT12751

Ampleon

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